NE33284中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書
NE33284規(guī)格書詳情
DESCRIPTION
The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume consumer and industrial applications.
FEATURES
? VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz
? HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz
? GATE LENGTH: 0.3 μm
? GATE WIDTH: 280 μm
? LOW COST METAL/CERAMIC PACKAGE
? TAPE & REEL PACKAGING OPTION AVAILABLE
產(chǎn)品屬性
- 型號：
NE33284
- 制造商：
NEC
- 制造商全稱：
NEC
- 功能描述：
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NEC |
2016+ |
SMT36 |
858 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
NEC |
21+ |
SMT86 |
3848 |
詢價 | |||
NEC |
SMT36 |
245 |
詢價 | ||||
NEC |
2450+ |
SMT |
6540 |
只做原裝正品現(xiàn)貨或訂貨!終端客戶免費申請樣品! |
詢價 | ||
NEC |
24+ |
NA |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
RENESAS/瑞薩 |
23+ |
26000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | |||
NEC |
6000 |
面議 |
19 |
DIP/SMD |
詢價 | ||
NEC |
25+23+ |
SMT86 |
6738 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
NEC |
22+ |
SMT |
3000 |
原裝正品,支持實單 |
詢價 | ||
NEC |
23+ |
SMT86 |
15000 |
全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 |
