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N5

型號(hào)：1PS66SB82；Package：SOT666；15 V, 30 mA low Cd Schottky barrier diodes

1.1Generaldescription EpitaxiallowcapacitanceSchottkybarrierdiodesencapsulatedinverysmallSMDplastic packages. 1.2Features Lowdiodecapacitance Lowforwardvoltage VerysmallSMDplasticpackages 1.3Applications Digitalapplications: Ultrahigh-speedswitching Clampi

N5

型號(hào)：2PB709AQW；Package：SC-70；PNP general purpose transistor

FEATURES ?Highcollectorcurrent(max.100mA) ?Lowcollector-emittersaturationvoltage(max.500mV).

N5

型號(hào)：2SC1654；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ●HighDCcurrentgain:hFE=130(Typ)(VCE=3V,IC=15mA). ●Highvoltage. APPLICATIONS ●Audiofrequencygeneralpurposeamplifierapplications.

N5

型號(hào)：BZX384-B51；Package：SOD-323；Voltage regulator diodes

DESCRIPTION Low-powervoltageregulatordiodesencapsulatedinaverysmallSOD323(SC-76)plasticSMDpackage. ThediodesareavailableinthenormalizedE24±2(BZX384-B)andapprox.±5(BZX384-C)tolerancerange.Theseriesconsistsof37typeswithnominalworkingvoltagesfrom2.4to75V.

N5

型號(hào)：BZX384-B51；Package：SOD-323；Voltage regulator diodes

DESCRIPTION Low-powervoltageregulatordiodesencapsulatedinaverysmallSOD323(SC-76)plasticSMDpackage. ThediodesareavailableinthenormalizedE24±2(BZX384-B)andapprox.±5(BZX384-C)tolerancerange.Theseriesconsistsof37typeswithnominalworkingvoltagesfrom2.4to75V.

PHI

N5

型號(hào)：BZX384-B51；Package：SOD323；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A),±2(BZX384-B)and approximately±5(BZX384-C)tolerancerange.Theseriesincludes37breakdownvol

N5

型號(hào)：BZX384-B51-Q；Package：SC-76；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A),±2(BZX384-B)and approximately±5(BZX384-C)tolerancerange.Theseriesincludes37breakdownvol

N5

型號(hào)：CJBA3134K-TP；Package：DFN1006-3L；N-Channel Enhancement Mode MOSFET

Features| Vos=20v| +RDS(ON)=300mQ(typ)@VGS=25V| +RDS(ON)=250mQ(typ)@VGS=45V +ESDProtectedupto2KV

N5

型號(hào)：CJBB3134K-TP；Package：DFN1006-3L；N-Channel Enhancement Mode MOSFET

Features VS=20v +RDS(ON)=300mQ(typ)@VGS=2.5V/ +RDS(ON)=250mQ(typ)@VGS=4.5V/ +ESDProtectedupto2KV.

N5

型號(hào)：ESD05V88D-2C；Package：DFN1006P3；Transient Voltage Suppressors for ESD Protection

Features 90WattsPeakPulsePowerperLine(tp=8/20μs) ProtectstwoBidirectionalI/Olines Lowclampingvoltage Workingvoltages:5.0V Lowleakagecurrent IEC61000-4-2(ESD)±15kV(airdischarge) ±8kV(contactdischarge) Applications CellPhoneHandsetsandAccessories Microprocessor