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絲?。?strong>N5.P；Package：DFN1006-3L；N-Channel Enhancement Mode MOSFET

Features | VDS = 20V | . RDS(ON)=300ma (typ) @ VGS=25V . RDS(ON) =250mQ (typ) @ VGS=4.5V ?ESD Protected up to 2KV |

文件：2.52898 Mbytes 頁數(shù)：5 Pages

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絲?。?strong>N5.P；Package：DFN1006-3L；N-Channel Enhancement Mode MOSFET

Features VDS = 20V + RDS(ON)=300mQ (typ) @ VGS= 2.5V + RDS(ON) =250mQ (typ.) @ VGS= 4.5V + ESD Protected up to 2KV

文件：2.52733 Mbytes 頁數(shù)：5 Pages

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絲印：N5.P；Package：DFN1006-3L；N-Channel Enhancement Mode MOSFET

Features VS = 20v + RDS(ON) =300mQ (typ) @ VGS= 2.5V/ + RDS(ON) =250mQ (typ) @ VGS= 4.5V/ + ESD Protected up to 2KV.

文件：2.52551 Mbytes 頁數(shù)：5 Pages

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絲?。?strong>N5.P；Package：DFN1006-3L；N-Channel Enhancement Mode MOSFET

Features VS = 20v + RDS(ON) =300mQ (typ) @ VGS= 2.5V/ + RDS(ON) =250mQ (typ) @ VGS= 4.5V/ + ESD Protected up to 2KV.

文件：2.52997 Mbytes 頁數(shù)：5 Pages

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絲?。?strong>N5.P；Package：DFN1006-3L；N-Channel Enhancement Mode MOSFET

Features VS = 20v + RDS(ON) =300mQ (typ) @ VGS= 2.5V/ + RDS(ON) =250mQ (typ) @ VGS= 4.5V/ + ESD Protected up to 2KV.

文件：2.54012 Mbytes 頁數(shù)：5 Pages

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絲印：N5.P；Package：DFN1006-3L；N-Channel Enhancement Mode MOSFET

Features VS = 20v + RDS(ON) =300mQ (typ) @ VGS= 2.5V/ + RDS(ON) =250mQ (typ) @ VGS= 4.5V/ + ESD Protected up to 2KV.

文件：2.52999 Mbytes 頁數(shù)：5 Pages

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臺舟電子

絲?。?strong>N5.P；Package：DFN1006-3L；N-Channel Enhancement Mode MOSFET

Features VS = 20v + RDS(ON) =300mQ (typ) @ VGS= 2.5V/ + RDS(ON) =250mQ (typ) @ VGS= 4.5V/ + ESD Protected up to 2KV.

文件：2.53181 Mbytes 頁數(shù)：5 Pages

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臺舟電子