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N15
ESD15V23T-LA

Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature 168~350WattsPeakPulsePowerperLine(tp=8/20μs) ProtectstwounidirectionalI/Olines ProtectsonebidirectionalI/Oline Workingvoltage:3.3~24V Lowclampingvoltage Lowleakagecurrent IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-2(ESD)±25kV(air),±20kV(contact):3.3V~8V IE

N15
ESD15V23TS-LA

Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature MoistureSensitivityLevel(MSL-1) AEC-Q101qualified 168~350WattsPeakPulsePowerperLine(tp=8/20μs) ProtectstwounidirectionalI/Olines ProtectsonebidirectionalI/Oline Lowclampingvoltage WorkingVoltages:3.3V~24V Lowleakagecurrent IEC61000-4-4(EFT):40A(5/50ηs

N10
IMN10

Package：SOT-457；Switching diode

FEATURES 1)AWIDEVARIETYOFCONFIGURATIONSAREAVAILABLE.(UMD5,UMD6,SMD5,SMD6) 2)MULTIPLEDIODESINONESMALLSURFACEMOUNTPACKAGE. 3)DIODECHARACTERISTICSAREMATCHEDINTHEPACKAGE. Applications Ultrahighspeedswitching

N10
IMN10-T108

Package：SOT-457；Switching Diode

Features Highreliability Smallmoldtype HighSpeedswitching Application Highspeedswitching

N11
IMN11

Package：SOT-457；Switching diode

FEATURES 1)AWIDEVARIETYOFCONFIGURATIONSAREAVAILABLE.(UMD5,UMD6,SMD5,SMD6) 2)MULTIPLEDIODESINONESMALLSURFACEMOUNTPACKAGE. 3)DIODECHARACTERISTICSAREMATCHEDINTHEPACKAGE. Applications Ultrahighspeedswitching

N133P
NEX90515APA-Q100

Package：HTSSOP8；150 mA, 40 V ultra-low Iq (5.3 μA) low-dropout voltage regulator

1.Generaldescription TheNEX90515-Q100deviceisalow-dropout(LDO) linearregulatordesignedforapplicationswithinput voltagesofupto40V.Itfeaturesatypicalquiescent current(IQ)ofonly5.3μAatlightloadandatypical shutdowncurrent(ISHUT)of300nAwhendisabled. This

N150P
NEX90515BPA-Q100

Package：SOT8062-1；150 mA, 40 V ultra-low Iq (5.3 μA) low-dropout voltage regulator

1.Generaldescription TheNEX90515-Q100deviceisalow-dropout(LDO) linearregulatordesignedforapplicationswithinput voltagesofupto40V.Itfeaturesatypicalquiescent current(IQ)ofonly5.3μAatlightloadandatypical shutdowncurrent(ISHUT)of300nAwhendisabled. This

N10L
NVTFS010N10MCLTAG

Package：WDFN8；MOSFET - Power, Single N-Channel 100 V, 10.6 m, 57.8 A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?NVTFWS010N10MCLTAG?WettableFlanksProduct ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

N10W
NVTFWS010N10MCLTAG

Package：WDFN8；MOSFET - Power, Single N-Channel 100 V, 10.6 m, 57.8 A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?NVTFWS010N10MCLTAG?WettableFlanksProduct ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

N113ES
PBRN113ES

Package：SC-43A；NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 1 kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance