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BAS70VV

Marking：N1；Package：SOT666；General-purpose triple Schottky diode

1.Generaldescription General-purposetripleSchottkydiodeinanultrasmallSOT666Surface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits ?Highswitchingspeed ?Lowleakagecurrent ?Highbreakdownvoltage ?Lowcapacitance 3.Applications ?Ultrahigh-speedswitc

BFR53

Marking：N1；Package：SOT-23；NPN 2 GHz wideband transistor

DESCRIPTION NPNwidebandtransistorinaplasticSOT23package. FEATURES ?Verylowintermodulationdistortion ?Veryhighpowergain. APPLICATIONS ?Thickandthin-filmcircuits.

BFS20W

Marking：N1；Package：SOT323；NPN medium frequency transistor

FEATURES ?Lowcurrent(max.25mA) ?Lowvoltage(max.20V). ?Verylowfeedbackcapacitance(typ.350fF). APPLICATIONS ?IFandVHFapplicationsinthickandthin-filmcircuits. DESCRIPTION NPNmediumfrequencytransistorinaSOT323(SC-70)plasticpackage.

BZX384-B36

Marking：N1；Package：SOD323；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A),±2(BZX384-B)and approximately±5(BZX384-C)tolerancerange.Theseriesincludes37breakdownvol

BZX384-B36

Marking：N1；Package：SOD-323；Voltage regulator diodes

DESCRIPTION Low-powervoltageregulatordiodesencapsulatedinaverysmallSOD323(SC-76)plasticSMDpackage. ThediodesareavailableinthenormalizedE24±2(BZX384-B)andapprox.±5(BZX384-C)tolerancerange.Theseriesconsistsof37typeswithnominalworkingvoltagesfrom2.4to75V.

BZX384-B36-Q

Marking：N1；Package：SC-76；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A),±2(BZX384-B)and approximately±5(BZX384-C)tolerancerange.Theseriesincludes37breakdownvol

DDTC143ZLP-7

Marking：N1；Package：X1-DFN1006-3；NPN PRE-BIASED (R1≠R2) SMALL SIGNAL IN DFN1006

Features -EpitaxialPlanarDieConstruction -Ultra-SmallLeadlessSurfaceMountPackage -IdeallySuitedforAutomatedAssemblyProcesses -TotallyLead-Free&FullyRoHSCompliant(Notes1&2) -HalogenandAntimonyFree.GreenDevice(Note3) -QualifiedtoAEC-Q101StandardsforHighR

DDTC143ZLP-7B

Marking：N1；Package：X1-DFN1006-3；NPN PRE-BIASED (R1≠R2) SMALL SIGNAL IN DFN1006

Features -EpitaxialPlanarDieConstruction -Ultra-SmallLeadlessSurfaceMountPackage -IdeallySuitedforAutomatedAssemblyProcesses -TotallyLead-Free&FullyRoHSCompliant(Notes1&2) -HalogenandAntimonyFree.GreenDevice(Note3) -QualifiedtoAEC-Q101StandardsforHighR

ESD2.5V88D-C

Marking：N1；Package：DFN1006；Transient Voltage Suppressors for ESD Protection

Features 104WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsoneBidirectionalI/Oline Lowclampingvoltage Workingvoltages:2.5V Lowleakagecurrent IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-2(ESD):±30kV(airdischarge)±30kV(contactdischarge) Applications CellPhoneHandset

FMN1

Marking：N1；Package：SMD5；Switching diode

FEATURES 1)AWIDEVARIETYOFCONFIGURATIONSAREAVAILABLE.(UMD5,UMD6,SMD5,SMD6) 2)MULTIPLEDIODESINONESMALLSURFACEMOUNTPACKAGE. 3)DIODECHARACTERISTICSAREMATCHEDINTHEPACKAGE. Applications Ultrahighspeedswitching