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MTP10N35_IR/國際整流器_Power Field Effect Transistor明嘉萊一部
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號
:MTP10N35
- Minimum Operating Temperature
:-65°C
- Maximum Power Dissipation
:125000mW
- Maximum Operating Temperature
:150°C
- Maximum Gate Source Voltage
:±20V
- Maximum Drain Source Voltage
:400V
- Maximum Continuous Drain Current
:10A
- Material
:Si
- Configuration
:Single
- Channel Type
:N
- Channel Mode
:Enhancement
- Category
:Power MOSFET
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