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MTP10N10EL規(guī)格書詳情
Logic Level TMOS E-FET? Power Field Effect Transistor
N-Channel Enhancement-Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
產(chǎn)品屬性
- 型號：
MTP10N10EL
- 功能描述：
MOSFET 100V 10A Logic Level
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
N/A |
2380 |
詢價 | |||
ON |
17+ |
TO-220 |
6200 |
詢價 | |||
MOT |
06+ |
TO-220 |
3000 |
原裝 |
詢價 | ||
ON |
24+ |
TO-220 |
16800 |
絕對原裝進口現(xiàn)貨 假一賠十 價格優(yōu)勢!? |
詢價 | ||
ON |
23+ |
TO-220 |
15000 |
專做原裝正品,假一罰百! |
詢價 | ||
ON |
2025+ |
TO-220AB |
3577 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價 | ||
VBSEMI/微碧半導(dǎo)體 |
24+ |
TO220 |
7800 |
全新原廠原裝正品現(xiàn)貨,低價出售,實單可談 |
詢價 | ||
ON Semiconductor |
2022+ |
TO-220-3 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
ON/安森美 |
22+ |
TO-220 |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
ON/安森美 |
24+ |
NA/ |
4250 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價 |
