MTP10N10E中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書
MTP10N10E規(guī)格書詳情
TMOS IV Power Field Effect Transistor
N-Channel Enhancement-Mode Silicon Gate
This advanced “E” series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and commutation modes. These new energy efficient devices also offer drain–to–source diodes with fast recovery times. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical, and offer additional safety margin against unexpected voltage transients.
? Internal Source–to–Drain Diode Designed to Replace External
Zener Transient Suppressor — Absorbs High Energy in the
Avalanche Mode — Unclamped Inductive Switching (UIS)
Energy Capability Specified at 100°C
? Commutating Safe Operating Area (CSOA) Specified for Use in Half and Full Bridge Circuits
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
產(chǎn)品屬性
- 型號：
MTP10N10E
- 制造商：
MOTOROLA
- 制造商全稱：
Motorola, Inc
- 功能描述：
TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON SEMI |
2004 |
13 |
公司優(yōu)勢庫存 熱賣中!! |
詢價 | |||
VBSEMI/微碧半導(dǎo)體 |
24+ |
TO220 |
7800 |
全新原廠原裝正品現(xiàn)貨,低價出售,實單可談 |
詢價 | ||
ON/安森美 |
23+ |
TO-220 |
89630 |
當(dāng)天發(fā)貨全新原裝現(xiàn)貨 |
詢價 | ||
ON |
20+ |
TO-220 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
ON |
24+ |
TO-220 |
16800 |
絕對原裝進(jìn)口現(xiàn)貨 假一賠十 價格優(yōu)勢!? |
詢價 | ||
MOT |
06+ |
TO-220 |
3000 |
原裝庫存 |
詢價 | ||
ON |
23+ |
TO-220 |
15000 |
專做原裝正品,假一罰百! |
詢價 | ||
ON |
2025+ |
TO-220AB |
3577 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價 | ||
ON |
23+ |
TO-220-3 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
24+ |
6210 |
詢價 |
