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首頁 >MTB23P06E>規(guī)格書列表

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MTB23P06E

TMOS POWER FET 23 AMPERES 60 VOLTS

TMOSE-FET?HighEnergyPowerFETD2PAKforSurfaceMount P-ChannelEnhancement-ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponents

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB23P06E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=23A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTB23P06V

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=23A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTB23P06V

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

MTB23P06V

P??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTB23P06V

TMOSPOWERFET23AMPERES60VOLTS

TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP23P06V

PowerMOSFET23Amps,60Volts

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTP23P06V

TMOSPOWERFET23AMPERES60VOLTSRDS(on)=0.120OHM

TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP23P06V

PowerMOSFET23Amps,60Volts

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTP23P06VG

PowerMOSFET23Amps,60Volts

ONSEMION Semiconductor

安森美半導體安森美半導體公司

詳細參數(shù)

  • 型號：

    MTB23P06E

  • 制造商：

    MOTOROLA

  • 制造商全稱：

    Motorola, Inc

  • 功能描述：

    TMOS POWER FET 23 AMPERES 60 VOLTS

供應商型號品牌批號封裝庫存備注價格
ON
1415+
TO-263
28500
全新原裝正品,優(yōu)勢熱賣
 詢價
ON
24+
N/A
5000
公司存貨
 詢價
ON
24+
T0-252
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
MOT/ON
22+
TO
6000
十年配單,只做原裝
 詢價
MOT/ON
23+
TO
15007
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
MOTOROLA
22+
TO-263
3000
原裝正品,支持實單
 詢價
MOT/ON
23+
TO
6000
原裝正品，支持實單
 詢價
MOT/ON
22+
TO
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
MOT/ON
25+
TO
37650
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
ON/安森美
24+
TO-263
30000
只做正品原裝現(xiàn)貨
 詢價
更多MTB23P06E供應商 更新時間2025-7-27 11:04:00

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