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SI4410BDY

N-Channel30-V(D-S)MOSFET

FEATURES ?TrenchFETPowerMOSFET ?100RgTested APPLICATIONS ?BatterySwitch ?LoadSwitch

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SI4410DY

N-channelenhancementmodefield-effecttransistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?1technology. Productavailability: Si4410DYinSOT96-1(SO8). Features ■Lowon-stateresistance ■Fastswitching ■TrenchMOS?technology. Applications ■DCtoDCconvertor

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

SI4410DY

SingleN-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thisdeviceiswellsuitedforlowvoltageandbattery

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SI4410DY

N-Channel30-V(D-S)MOSFET

FEATURES ??TrenchFETPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SI4410DY

HEXFETPowerMOSFET

Description ThisN-channelHEXFET?PowerMOSFETisproducedusingInternationalRectifiersadvancedHEXFETpowerMOSFETtechnology.Thelowon-resistanceandlowgatechargeinherenttothistechnologymakethisdeviceidealforlowvoltageorbatterydrivenpowerconversionapplications TheSO-

IRF

International Rectifier

SI4410DY

N-ChannelMOSFET

■Features ●VDS(V)=30V ●ID=10A(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

SI4410DY

N-channelTrenchMOSlogiclevelFET

1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits Low

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

SI4410DY-HF

N-ChannelMOSFET

■Features ●VDS(V)=30V ●ID=10A(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

SI4410DYPBF

HEXFET?PowerMOSFET

Description ThisN-channelHEXFET?PowerMOSFETisproducedusingInternationalRectifiersadvancedHEXFETpowerMOSFETtechnology.Thelowonresistanceandlowgatechargeinherenttothistechnologymakethisdeviceidealforlowvoltageorbatterydrivenpowerconversionapplications. TheSO-

IRF

International Rectifier

SI4410DYPBF

N-ChannelMOSFET

Description ThisN-channelHEXFET?PowerMOSFETisproducedusingInternationalRectifiersadvancedHEXFETpowerMOSFETtechnology.Thelowonresistanceandlowgatechargeinherenttothistechnologymakethisdeviceidealforlowvoltageorbatterydrivenpowerconversionapplications. TheSO-

IRF

International Rectifier

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24+
4880
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2022+
4880
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BEL
20+
電路保護(hù)
6985
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NA
1000
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Panduit
2022+
1
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BEL
23+
NA
19960
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集電通/JDT
25+
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860000
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集電通/JDT
2450+
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6540
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STELVIO
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