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OP290GPZ

Precision,LowPower,MicropowerDualOperationalAmplifier

FEATURES Single-/dual-supplyoperation:1.6Vto36V,±0.8Vto±18VTruesingle-supplyoperation;inputandoutputvoltageInput/outputrangesincludegroundLowsupplycurrent(peramplifier),20μAmaximumHighoutputdrive,5mAminimumLowinputoffsetvoltage,200μVtypicalHighopen-loo

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

OP290GS

Precision,LowPower,MicropowerDualOperationalAmplifier

GENERALDESCRIPTION TheOP290isahighperformancemicropowerdualopampthatoperatesfromasinglesupplyof1.6Vto36Vorfromdualsuppliesof±0.8Vto±18V.InputvoltagerangeincludesthenegativerailallowingtheOP290toaccommodateinputsignalsdowntogroundinsingle-supplyo

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

OP-290GS

PRECISION,LOWPOWER,MICROPOWERDUALOPERATIONALAMPLIFIER

GENERALDESCRIPTION TheOP-290isahighperformancemicropowerdualopampthatoperatesfromasinglesupplyof+1.6Vto+36Vorfromdualsuppliesof±0.8Vto±18V.InputvoltagerangeincludesthenegativerailallowingtheOP-290toaccommodateinputsignalsdowntogroundinsinglesupplyo

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

PMCXB290UE

20V,complementaryN/P-channelTrenchMOSFET

1.Generaldescription ComplementaryN/P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultra smallDFN1010B-6(SOT1216)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits ?Lowthresholdvoltage ?Veryfastswitching

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PMDT290UCE

20/20V,800/550mAN/P-channelTrenchMOSFET

1.Generaldescription ComplementaryN/P-channelenhancementmodeField-EffectTransistor(FET)inanultrasmall andflatleadSOT666Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. 2.Featuresandbenefits ?Veryfastswitching ?TrenchMOSFETtechnology ?ESD

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PMDT290UNE

20V,800mAdualN-channelTrenchMOSFET

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PMDT290UNE

20V,800mAdualN-channelTrenchMOSFET

1.Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inanultrasmallandflatlead SOT666Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Veryfastswitching ?TrenchMOSFETtechnology ?ESDprotection

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PMDXB290UNE

20V,dualN-channelTrenchMOSFET

1.Generaldescription DualN-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmall DFN1010B-6(SOT1216)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. 2.Featuresandbenefits ?Lowthresholdvoltage ?Veryfastswitching ?TrenchMO

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PME290

EMIsuppressor,classesX1andY2,metallizedpaper

ETCList of Unclassifed Manufacturers

未分類制造商

PMF290XN

N-channelmTrenchMOSextremelylowlevelFET

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

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FLIRCommercialSystems-In
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1
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5000
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141
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更多MO290-RK供應(yīng)商 更新時(shí)間2025-7-22 16:06:00

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