描述 Description

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.

特性 Features

? Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
? High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc= 45 (Min) @ IC = 2 Adc= 10 (Min) @ IC = 5 Adc
? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
? Straight Lead Version in Plastic Sleeves (\"-1\" Suffix)
? Lead Formed Version in 16 mm Tape and Reel (\"T4\" Suffix)
? Low Collector-Emitter Saturation Voltage -VCE(sat) = 0.3 Vdc (Max) @ I C = 500 mAdc= 0.75 Vdc (Max) @ IC = 2.0 Adc
? High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc
? Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
? NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
? These Devices are Pb-Free and are RoHS Compliant

簡介

MJD200屬于分立半導體產(chǎn)品的晶體管-雙極性晶體管（BJT）-單個。由制造生產(chǎn)的MJD200晶體管 - 雙極性晶體管（BJT）- 單個分立式雙極結(jié)型晶體管 (BJT) 通常在音頻、無線電及其他應(yīng)用中用于構(gòu)建模擬信號放大功能。作為大批量生產(chǎn)的第一批半導體器件之一，對于涉及高頻開關(guān)和在大電流或高電壓下工作的應(yīng)用而言，它們的特性相比某些器件類型不占優(yōu)勢，但對于需要以極小的噪聲和失真構(gòu)建模擬信號的應(yīng)用而言，它們?nèi)匀皇鞘走x技術(shù)。