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MJD200

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

SILICONPOWERTRANSISTORS5AMPERES25VOLTS12.5WATTS MJD200NPN MJD210PNP NPN/PNPSiliconDPAKForSurfaceMountApplications ...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. ?Collector–EmitterSustainingVoltage—VCEO(sus)=25Vdc(Min)@IC=10mAdc

MJD200

Complementary Plastic Power Transistors

ComplementaryPlasticPowerTransistors NPN/PNPSiliconDPAKForSurfaceMountApplications Designedforlowvoltage,low?power,high?gainaudioamplifierapplications. Features ?Collector?EmitterSustainingVoltage?VCEO(sus)=25Vdc(Min)@IC=10mAdc ?HighDCCurrentGain?hFE

MJD200

D-PAK for Surface Mount Applications

D-PAKforSurfaceMountApplications ?HighDCCurrentGain ?Built-inaDamperDiodeatE-C ?LeadFormedforSurfaceMountApplications(NoSuffix) ?StraightLead(I-PAK,“-I“Suffix)

MJD200

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=25V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=0.3V(Max)@IC=0.5A APPLICATIONS ·Designedforuseingeneralpurposeampliferandlow Speedswitchingapplications

MJD200

5 A, 25 V NPN Bipolar Power Transistor; ? Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc\n? High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc= 45 (Min) @ IC = 2 Adc= 10 (Min) @ IC = 5 Adc\n? Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)\n? Straight Lead Version in Plastic Sleeves (\"-1\" Suffix)\n? Lead Formed Version in 16 mm Tape and Reel (\"T4\" Suffix)\n? Low Collector-Emitter Saturation Voltage -VCE(sat) = 0.3 Vdc (Max) @ I C = 500 mAdc= 0.75 Vdc (Max) @ IC = 2.0 Adc\n? High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc\n? Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB\n? NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable\n? These Devices are Pb-Free and are RoHS Compliant\n;

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.

MJD200

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS;

恩XP

MJD200

Complementary Plastic Power Transistors

MJD200

Complementary Plastic Power Transistors

MJD200

Complementary Plastic Power Transistors

MJD200

Package：TO-252-3，DPak（2 引線 + 接片），SC-63；包裝：托盤 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 25V 5A DPAK