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PBSS5350PAS-Q

50V,3APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice (SMD)plasticpackagewithvisibleandsolderablesidepads. NPNcomplement:PBSS4350PAS-Q 2.Featuresandbenefits ?DFN2020D-3(SOT1061D)package ?Lowcollector-emittersatura

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5350S

Highpowerdissipation(830mW)

DESCRIPTION PNPlowVCEsattransistorinaSOT54plasticpackage. NPNcomplement:PBSS4350S. FEATURES ?Highpowerdissipation(830mW) ?Ultralowcollector-emittersaturationvoltage ?3Acontinuouscurrent ?Highcurrentswitching ?Improveddevicereliabilityduetoreducedheat g

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5350SS

50V,2.7ANPN/NPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5350SS

50V,2.7ANPN/PNPlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5350SS

50V,2.7APNP/PNPlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5350T

LowVCEsat(BISS)transistors

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5350T

50V,3APNPlowVCEsat(BISS)transistor

DESCRIPTION PNPlowVCEsattransistorinaSOT23plasticpackage. NPNcomplement:PBSS4350T. FEATURES ?Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat ?Highcollectorcurrentcapability ?Highcollectorcurrentgain ?Improvedefficiencyduetoreducedheatge

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5350T

SiliconPNPtransistorinaSOT-23PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features LowVCE(sat),highcurrent. Applications Generalpurposeswitchingandmuting,LCDback-lighting,supplylineswitchingcircuits.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

PBSS5350T

50V,3APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS4350T 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat ?Highcollectorcurrentcapability

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5350T

TRANSISTOR(PNP)

Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features LowVCE(sat),highcurrent. Applications Generalpurposeswitchingandmuting LCDback-lighting Supplylineswitchingcircuits.

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

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MARKI
10
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Marki
24+
模塊
400
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Marki
300
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TaeYoungO
NA
8560
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TAEYOUNGOPTICS
25+
NA
880000
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Marki microwave
24+
N/A
4500
Marki優(yōu)勢(shì)渠道
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Eaton - Electronics Division
25+
0402(1005 公制)
9350
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Eaton
23+
TO-18
12800
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更多MFB-5350供應(yīng)商 更新時(shí)間2025-7-9 10:00:00