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PBSS5350PAS-Q

Marking:G4;Package:SOT1061D;50 V, 3 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice (SMD)plasticpackagewithvisibleandsolderablesidepads. NPNcomplement:PBSS4350PAS-Q 2.Featuresandbenefits ?DFN2020D-3(SOT1061D)package ?Lowcollector-emittersatura

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5350S

Highpowerdissipation(830mW)

DESCRIPTION PNPlowVCEsattransistorinaSOT54plasticpackage. NPNcomplement:PBSS4350S. FEATURES ?Highpowerdissipation(830mW) ?Ultralowcollector-emittersaturationvoltage ?3Acontinuouscurrent ?Highcurrentswitching ?Improveddevicereliabilityduetoreducedheat g

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5350SS

50V,2.7ANPN/NPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5350SS

50V,2.7ANPN/PNPlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5350SS

50V,2.7APNP/PNPlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5350T

LowVCEsat(BISS)transistors

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5350T

SiliconPNPtransistorinaSOT-23PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features LowVCE(sat),highcurrent. Applications Generalpurposeswitchingandmuting,LCDback-lighting,supplylineswitchingcircuits.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

PBSS5350T

50V,3APNPlowVCEsat(BISS)transistor

DESCRIPTION PNPlowVCEsattransistorinaSOT23plasticpackage. NPNcomplement:PBSS4350T. FEATURES ?Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat ?Highcollectorcurrentcapability ?Highcollectorcurrentgain ?Improvedefficiencyduetoreducedheatge

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5350T

50V,3APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS4350T 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat ?Highcollectorcurrentcapability

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5350T

TRANSISTOR(PNP)

Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features LowVCE(sat),highcurrent. Applications Generalpurposeswitchingandmuting LCDback-lighting Supplylineswitchingcircuits.

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

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恩XP
23+
TO-92
89630
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NEXPERIA
23+
TO-92-3
128000
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22+
NA
45000
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恩XP
2022+
TO-92-3
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo)
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恩XP
25+
TO-226-3 TO-92-3(TO-226AA)
9350
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PJSEMI(平晶微)
23+
SOT-89
200
三極管/MOS管/晶體管 > 三極管(BJT)
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NK/南科功率
2025+
SOT-89
986966
國(guó)產(chǎn)
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NK/南科功率
2511
SOT-89
360000
電子元器件采購(gòu)降本 30%!盈慧通原廠(chǎng)直采,砍掉中間差價(jià)
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恩XP
2016+
SOP8
6000
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
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PHI
2020+
SOP8
190
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更多PBSS5350PAS-Q供應(yīng)商 更新時(shí)間2025-7-15 15:37:00