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零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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P-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP50P06KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=?10V,ID=?25A) RDS(on)2=23mΩMAX.(VGS=?4.5V,ID=?25A) ?Lowinputcapacitance | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
-60V–-50A–P-channelPowerMOSFETApplication:Automotive Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=17m?Max.(VGS=-10V,ID=-25A) RDS(on)=23m?Max.(VGS=-4.5V,ID=-25A) ?Lowinputcapacitance:Ciss=50 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
-60V–-50A–P-channelPowerMOSFETApplication:Automotive Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=16.5m?Max.(VGS=-10V,ID=-25A) RDS(on)=23.0m?Max.(VGS=-4.5V,ID=-25A) ?Lowinputcapacitance:Ciss | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
AutomotiveP-Channel60V(D-S)175?CMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
AutomotiveP-Channel60V(D-S)175?CMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
GlassPassivatedBridgeRectifiers | TSCTaiwan Semiconductor Company, Ltd 臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司 | TSC | ||
GlassPassivatedBridgeRectifiers | TSCTaiwan Semiconductor Company, Ltd 臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司 | TSC | ||
50A,600V-1000VGlassPassivatedBridgeRectifiers | TSCTaiwan Semiconductor Company, Ltd 臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司 | TSC | ||
-50A,-60VP-CHANNEL(D-S)POWERMOSFET | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC |
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