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首頁 >MAX803SEXR-T>規(guī)格書列表

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MIP803

SiliconMOSIC

■Features ●Allowingdownsizingofthesetsthroughthereductionofapartscountresultingfromthevoltagestep-uputilizingacoilinsteadofatransformerandemployingthethinsurfacemountingpackage. ●Allowinglowvoltagedrive(adaptabletoasmallandlow-voltagebattery),orVC

PanasonicPanasonic Semiconductor

松下松下電器

MJE803

MonolithicConstructionWithBuilt-inBase-EmitterResistors

MonolithicConstructionWithBuilt-inBaseEmitterResistors ??????? ?HighDCCurrentGain:hFE=750(Min.)@IC=1.5and2.0ADC ?ComplementtoMJE700/701/702/703

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

MJE803

SILICONNPNPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheMJE802andMJE803aresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecSOT-32plasticpackage.Theyareintendedforuseinmediumpowerlinearandswitchingapplications. ■SGS-THOMSONPREFERREDSALESTYPES

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

MJE803

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJE803

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY

Thesedevicesaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE =2000(Typ)@IC =2.0Adc ?MonolithicConstructionwithBuilt?inBase?EmitterResistorsto LimitLeakage?Multiplication ?ChoiceofPackages?M

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE803

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE803

SiliconNPNPowerTransistors

DESCRIPTION ?WithTO-126package ?ComplementtotypeMJE700/701/702/703 ?HighDCcurrentgain ?DARLINGTON APPLICATIONS ?Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

SAVANTIC

Savantic, Inc.

MJE803

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION ?WithTO-126package ?ComplementtotypeMJE700/701/702/703 ?HighDCcurrentgain ?DARLINGTON APPLICATIONS ?Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJE803

SiliconNPNPowerTransistors

DESCRIPTION ?WithTO-126package ?ComplementtotypeMJE700/701/702/703 ?HighDCcurrentgain ?DARLINGTON APPLICATIONS ?Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJE803

PlasticDarlingtonComplementarySiliconPowerTransistors

...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

詳細參數(shù)

  • 型號：

    MAX803SEXR-T

  • 功能描述：

    監(jiān)控電路

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 輸出類型：

    Active Low, Open Drain

  • 人工復位：

    Resettable

  • 監(jiān)視器：

    No Watchdog

  • 電池備用開關(guān)：

    No Backup

  • 上電復位延遲（典型值）：

    10 s

  • 電源電壓-最大：

    5.5 V

  • 最大工作溫度：

    + 85 C

  • 安裝風格：

    SMD/SMT

  • 封裝/箱體：

    UDFN-6

  • 封裝：

    Reel

供應商型號品牌批號封裝庫存備注價格
MAX
23+
SC-70-3
5000
原裝正品,假一罰十
 詢價
MAXIM
23+
NA
25060
只做進口原裝,終端工廠免費送樣
 詢價
MAX
22+
SC-70
8200
原裝現(xiàn)貨庫存.價格優(yōu)勢!!
 詢價
N/A
2447
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
MAXIM
22+
SC-70-3
3000
原裝正品,支持實單
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MAXIM
1349+
58
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
Maxim(美信)
23+
標準封裝
6000
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 詢價
MAXIM
23+
12800
公司只有原裝 歡迎來電咨詢。
 詢價
Maxim(美信)
24+
NA/
8735
原廠直銷,現(xiàn)貨供應,賬期支持!
 詢價
MAX
2405+
原廠封裝
12500
15年芯片行業(yè)經(jīng)驗/只供原裝正品:0755-83267371鄒小姐
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更多MAX803SEXR-T供應商 更新時間2025-7-24 14:03:00

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