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LM5109

LM5109 100V/1A Peak Half Bridge Gate Driver

1FEATURES 2?DrivesBothaHighSideandLowSideN- ChannelMOSFET ?1APeakOutputCurrent(1.0ASink/1.0A Source) ?IndependentTTLCompatibleInputs ?BootstrapSupplyVoltageto118VDC ?FastPropagationTimes(27nsTypical) ?Drives1000pFLoadwith15nsRiseandFall Times ?

LM5109

100V/1A 峰值半橋柵極驅(qū)動器; ? Drives both a high side and low side N-Channel MOSFET\n? 1A peak output current (1.0A sink / 1.0A source)\n? Independent TTL compatible inputs\n? Bootstrap supply voltage to 118V DC\n? Fast propagation times (27 ns typical)\n? Drives 1000 pF load with 15ns rise and fall times\n? Excellent propagation delay matching (2 ns typical)\n? Supply rail under-voltage lockout\n? Low power consumption\n? Pin compatible with ISL6700;

The LM5109 is a low cost high voltage gate driver, designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100V. The outputs are independently controlled with TTL compatible input thresholds. A robust level shifter technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high side gate driver. Under-voltage lockout is provided on both the low side and the high side power rails. The device is available in the SOIC-8 and the thermally enhanced LLP-8 packages.\n\n \n\n The LM5109 is a low cost high voltage gate driver, designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100V. The outputs are independently controlled with TTL compatible input thresholds. A robust level shifter technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high side gate driver. Under-voltage lockout is provided on both the low side and the high side power rails. The device is available in the SOIC-8 and the thermally enhanced LLP-8 packages.\n\n \n\n

LM5109

100V / 1A Peak Half Bridge Gate Driver

LM5109

100V/1A Peak Half Bridge Gate Driver

LM5109B

具有 8V UVLO 和高噪聲抗擾度的 1A、100V 半橋柵極驅(qū)動器; ? 可驅(qū)動高側(cè)和低側(cè) N 溝道金屬氧化物半導(dǎo)體場效應(yīng)晶體管 (MOSFET)\n? 1A 峰值輸出電流（1.0A 灌電流和 1.0A 拉電流）\n? 與獨(dú)立的晶體管-晶體管邏輯電路 (TTL) 和互補(bǔ)金屬氧化物半導(dǎo)體 (CMOS) 兼容的輸入\n? 自舉電源電壓高達(dá) 108VDC\n? 短暫傳播時(shí)間（典型值為 30ns）\n? 可以 15ns 的上升和下降時(shí)間驅(qū)動 1000pF 負(fù)載\n? 優(yōu)異的傳播延遲匹配（典型值為 2ns)\n? 支持電源軌欠壓鎖定\n? 低功耗\n? 8 引腳小外形尺寸集成電路 (SOIC) 和耐熱增強(qiáng)型 8 引腳晶圓級小外形無引線 (WSON) 封裝;

LM5109B 器件是一款經(jīng)濟(jì)高效的高電壓柵極驅(qū)動器，專為驅(qū)動采用同步降壓或半橋配置的高側(cè)和低側(cè) N 溝道 MOSFET 而設(shè)計(jì)。懸空高側(cè)驅(qū)動器能夠在高達(dá) 90V 的電源軌電壓下工作。輸出通過經(jīng)濟(jì)高效的 TTL 和 CMOS 兼容輸入閾值獨(dú)立控制。穩(wěn)健可靠的電平轉(zhuǎn)換技術(shù)同時(shí)擁有高運(yùn)行速度和低功耗特性，并且可提供從控制輸入邏輯到高側(cè)柵極驅(qū)動器的干凈電平轉(zhuǎn)換。該器件在低側(cè)和高側(cè)電源軌上提供了欠壓鎖定功能。該器件采用 8 引腳 SOIC 和耐熱增強(qiáng)型 8 引腳 WSON 封裝。

LM5109B-Q1

具有 8V UVLO 和高抗擾度的汽車類 1A、100V 半橋柵極驅(qū)動器; ? 符合汽車類 應(yīng)用標(biāo)準(zhǔn)\n? 具有符合 AEC-Q100 標(biāo)準(zhǔn)的下列結(jié)果 \n? 器件溫度 1 級 \n? 器件人體放電模型 (HBM) 靜電放電 (ESD) 分類等級 1C\n? 器件組件充電模型 (CDM) ESD 分類等級 C4A\n \n? 可驅(qū)動高側(cè)和低側(cè) N 溝道金屬氧化物半導(dǎo)體場效應(yīng)晶體管 (MOSFET)\n? 1A 峰值輸出電流（1.0A 灌電流/1.0A 拉電流）\n? 獨(dú)立的晶體管-晶體管邏輯電路/互補(bǔ)金屬氧化物半導(dǎo)體 (TTL/CMOS) 兼容輸入\n? 自舉電源電壓高達(dá) 108V（直流）\n? 短暫傳播時(shí)間（典型值為 30ns）\n? 可以 15ns 的上升和下降時(shí)間驅(qū)動 1000pF 負(fù)載\n? 優(yōu)異的傳播延遲匹配（典型值為 2ns)\n? 電源軌欠壓鎖定\n? 低功耗\n? 耐熱增強(qiáng)型晶圓級小外形無引線 (WSON)-8 封裝;

LM5109B-Q1 是一款具有成本效益的高電壓柵極驅(qū)動器，設(shè)計(jì)用于驅(qū)動采用同步降壓或半橋配置的高側(cè)和低側(cè) N 溝道 MOSFET。懸空高側(cè)驅(qū)動器能夠在高達(dá) 90V 的電源軌電壓下工作。輸出通過兼容 TTL/CMOS 的邏輯輸入閾值獨(dú)立控制。穩(wěn)健可靠的電平轉(zhuǎn)換技術(shù)同時(shí)擁有高運(yùn)行速度和低功耗特性，并且可提供從控制輸入邏輯到高側(cè)柵極驅(qū)動器的干凈電平轉(zhuǎn)換。該器件在低側(cè)和高側(cè)電源軌上提供了欠壓鎖定功能。該器件采用耐熱增強(qiáng)型 WSON(8) 封裝。

LM5109MA/NOPB.A

絲?。?a target="_blank" title="Marking" href="/l5109ma/marking.html">L5109MA；Package：SOIC；LM5109 100V/1A Peak Half Bridge Gate Driver

1FEATURES 2?DrivesBothaHighSideandLowSideN- ChannelMOSFET ?1APeakOutputCurrent(1.0ASink/1.0A Source) ?IndependentTTLCompatibleInputs ?BootstrapSupplyVoltageto118VDC ?FastPropagationTimes(27nsTypical) ?Drives1000pFLoadwith15nsRiseandFall Times ?

LM5109MA/NOPB.B

絲?。?a target="_blank" title="Marking" href="/l5109ma/marking.html">L5109MA；Package：SOIC；LM5109 100V/1A Peak Half Bridge Gate Driver

1FEATURES 2?DrivesBothaHighSideandLowSideN- ChannelMOSFET ?1APeakOutputCurrent(1.0ASink/1.0A Source) ?IndependentTTLCompatibleInputs ?BootstrapSupplyVoltageto118VDC ?FastPropagationTimes(27nsTypical) ?Drives1000pFLoadwith15nsRiseandFall Times ?

LM5109MASLASHNOPB

LM5109 100V/1A Peak Half Bridge Gate Driver

1FEATURES 2?DrivesBothaHighSideandLowSideN- ChannelMOSFET ?1APeakOutputCurrent(1.0ASink/1.0A Source) ?IndependentTTLCompatibleInputs ?BootstrapSupplyVoltageto118VDC ?FastPropagationTimes(27nsTypical) ?Drives1000pFLoadwith15nsRiseandFall Times ?

LM5109MASLASHNOPB.A

絲印：L5109MA；Package：SOIC；LM5109 100V/1A Peak Half Bridge Gate Driver

1FEATURES 2?DrivesBothaHighSideandLowSideN- ChannelMOSFET ?1APeakOutputCurrent(1.0ASink/1.0A Source) ?IndependentTTLCompatibleInputs ?BootstrapSupplyVoltageto118VDC ?FastPropagationTimes(27nsTypical) ?Drives1000pFLoadwith15nsRiseandFall Times ?