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NTJS4160N

HighEfficiencyDC-DCConverters

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

PBSS4160DPN

60V,1ANPN/PNPlowVCEsat(BISS)transistor

Generaldescription NPN/PNPlowVCEsat(BISS)transistorpairinaSOT457(SC-74)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highefficiency,reducesheatgeneration ■Reducesprinted-circuitboardarearequire

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS4160DPN

60V,1ANPN/PNPlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS4160DS

60V1ANPN/NPNlowVCEsat(BISS)transistor

Generaldescription NPN/NPNlowVCEsatBreakthroughinSmallSignal(BISS)transistorpairinaSOT457(SC-74)SurfaceMountedDevice(SMD)plasticpackage. PNPcomplement:PBSS5160DS. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapability:ICandICM

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS4160DS

60V,1ANPN/NPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS4160PAN

60V,1ANPN/NPNlowVCEsat(BISS)transistor

1.Generaldescription NPN/NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadless mediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PBSS4160PANP.PNP/PNPcomplement:PBSS5160PAP. 2.Featuresandbenefits ?Verylowcollec

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS4160PANP

60V,1ANPN/PNPlowVCEsat(BISS)transistor

1.Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpower DFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PBSS4160PAN.PNP/PNPcomplement:PBSS5160PAP. 2.Featuresandbenefits ?Verylowcollect

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS4160PANPS

60V,1ANPN/NPNlowVCEsat(BISS)transistor

Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpowerDFN2020D-6(SOT1118D)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. NPN/NPNcomplement:PBSS4160PANS.PNP/PNPcomplement:PBSS5160PAPS. Features

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS4160PANS

60V,1ANPN/NPNlowVCEsat(BISS)transistor

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

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