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PBSS4160DS

絲印：B8；Package：SOT-26；60 V 1 A NPN/NPN low VCEsat (BISS) transistor

Generaldescription NPN/NPNlowVCEsatBreakthroughinSmallSignal(BISS)transistorpairinaSOT457(SC-74)SurfaceMountedDevice(SMD)plasticpackage. PNPcomplement:PBSS5160DS. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapability:ICandICM

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PBSS4160DS

絲印：B8；Package：SC-74；60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor; ? Low collector-emitter saturation voltage VCEsat\n? High collector current capability: IC and ICM\n? High collector current gain (hFE) at high IC\n? High efficiency due to less heat generation\n? Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n? AEC-Q101 qualified\n;

NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.\n PNP/PNP complement: PBSS5160DS.\n

PBSS4160DS-Q

60 V, 1 A NPN/NPN low VCEsat transistor; ? Low collector-emitter saturation voltage VCEsat\n? High collector current capability: IC and ICM\n? High collector current gain (hFE) at high IC\n? High efficiency due to less heat generation\n? Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n? Qualified according to AEC-Q101 and recommended for use in automotive applications\n;

NPN/NPN low VCEsat transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.\n PNP/PNP complement: PBSS5160DS-Q\n

PBSS4160DS_15

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

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PBSS4160DSZ

Package：SC-74，SOT-457；包裝：卷帶（TR） 類別：分立半導體產品 晶體管 - 雙極性晶體管（BJT）- 陣列 描述：TRANS 2NPN 60V 1A SC-74

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