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MMBTA14

Marking：K3D；Package：SOT-23；NPN General Purpose Transistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable(MMBTA63/MMBTA64). ●Highcurrentgain APPLICATIONS ●Idealformediumpoweramplificationandswitching.

MMBTA14

Marking：K3D；Package：SOT-23；NPN SURFACE MOUNT DARLINGTON TRANSISTOR

Features ?EpitaxialPlanarDieConstruction ?ComplementaryPNPTypesAvailable(MMBTA63/MMBTA64) ?IdealforMediumPowerAmplificationandSwitching ?HighCurrentGain ?Lead,HalogenandAntimonyFree,RoHSCompliantGreenDevice(Notes3and4) ?QualifiedtoAEC-Q101StandardsforHig

MMBTA14

Marking：K3D；Package：SOT-23；NPN Darlington Amplifier Transistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable(MMBTA63/MMBTA64). ●Highcurrentgain. APPLICATIONS ●Idealformediumpoweramplificationandswitching.

mmbta14

Marking：K3D；Package：SOT-23；NPN Silicon Epitaxial Planar Transistors

FEATURES DarlingtonAmplifier

HABTA14

Marking：K3D；Package：SOT-23；GENERAL PURPOSE TRANSISTOR

MMBTA14

Marking：K3D；Package：SOT-23；NPN Darlington Amplifier Transistor

MMBTA14

Marking：K3D；Package：SOT-23；NPN SURFACE MOUNT DARLINGTON TRANSISTOR

IKN03N60RC2

Marking：K3DRC2；Package：PG-SOT223-3；600 V Reverse Conducting Drive 2 offering cost effective IGBT with monolithically integrated diode

Features ?VCE=600V ?IC=3A ?Verytightparameterdistribution ?Operatingrangeof1to20kHz ?Maximumjunctiontemperature150°C ?Shortcircuitcapabilityof3μs ?Humidityrobustdesign ?Pb-freeleadplating;RoHScompliant ?CompleteproductspectrumandPSpiceModels:htt