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首頁>JANS2ST3360K>規(guī)格書詳情

JANS2ST3360K中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

JANS2ST3360K
廠商型號

JANS2ST3360K

功能描述

Rad-Hard 60 V, 0.8 A NPN and PNP complementary transistors

文件大小

272.25 Kbytes

頁面數(shù)量

12

生產(chǎn)廠商

STMICROELECTRONICS

中文名稱

意法半導(dǎo)體

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-8-6 16:12:00

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JANS2ST3360K規(guī)格書詳情

特性 Features

? Hermetic package

? Qualified as per MIL-PRF-M19500/773

? 100 krad

描述 Description

The JANS2ST3360K is dual complementary (NPN and PNP) bipolar transistor in a

single Flat-8 hermetic package. Qualified as per MIL-PRF-M19500/773 it is available

in JANS and JANSR screening options.

Able to operate under critical environment and radiation exposure, it provides high

reliability performance and immunity to the total ionizing dose (TID) at high and low

dose rate conditions.

Specifically recommended for space and harsh environment applications it is suitable

for low current and high precision circuits such preamplifiers, oscillators, current

mirror configuration and high peak current required in power MOSFET driver circuits.

In case of discrepancies between this datasheet and the relevant agency

specification, the latter takes precedence.

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