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首頁>IXGH28N60B3D1>芯片詳情
IXGH28N60B3D1 分立半導(dǎo)體產(chǎn)品晶體管 - UGBT、MOSFET - 單 IXYS
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原廠料號:IXGH28N60B3D1品牌:IXYS/艾賽斯
原裝現(xiàn)貨/15年行業(yè)經(jīng)驗(yàn)歡迎詢價
IXGH28N60B3D1是分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單。制造商IXYS/艾賽斯/IXYS生產(chǎn)封裝TO-247/TO-247-3的IXGH28N60B3D1晶體管 - UGBT、MOSFET - 單單 IGBT(絕緣柵雙極晶體管)是一種具有三個端子的多層半導(dǎo)體器件,能夠處理大電流,具有快速開關(guān)特性。其特征參數(shù)包括類型、集射極擊穿電壓、集電極電流、脈沖集電極電流、VCE(ON)、開關(guān)能量和柵極電荷。
產(chǎn)品屬性
更多- 類型
描述
- 型號
:IXGH28N60B3D1
- Collector Current @ 25 ℃ (A)
:66
- VCE(sat) - Collector-Emitter Saturation Voltage (V)
:1.8
- Fall Time [Inductive Load] (ns)
:100
- Configuration
:Copack (FRED)
- Package Type
:TO-247U
- Thermal resistance [junction-case] [IGBT] (K/W)
:0.66
- Turn-off Energy @ 125 ℃ (mJ)
:1
- Collector Current @ 110 ℃ (A)
:28
- Thermal resistance [junction-case] [Diode] (K/W)
:1
- Forward Current @ 110 ℃ (A)
:10
供應(yīng)商
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