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IXFA6N120P

Polar HiPerFET Power MOSFET

Polar?HiPerFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicDiode ●LowQG ●LowRDS(on) ●LowDrain-to-TabCapacitance ●LowPackageInductance Advant

IXYS

IXYS Corporation

IXFA6N120P

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFA6N120P

Power MOSFET

IXYS

IXYS Corporation

IXFA6N120P

N通道HiPerFET MOSFET; ? 國際標(biāo)準(zhǔn)包裝\n? 動(dòng)態(tài)dv/dt額定值\n? 雪崩評(píng)級(jí)\n? 快速本征整流器\n? 較低的QG和RDS(on)\n? 較低的漏極至彈片電容\n? 較低的封裝電感\(zhòng)n;

Littelfuselittelfuse

力特力特公司

IXFA6N120P_15

Power MOSFET

IXYS

IXYS Corporation

IXFH6N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH6N120

HighVoltageHiPerFETPowerMOSFET

HighVoltageHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandto

IXYS

IXYS Corporation

IXFH6N120P

PolarHiPerFETPowerMOSFET

Polar?HiPerFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicDiode ●LowQG ●LowRDS(on) ●LowDrain-to-TabCapacitance ●LowPackageInductance Advant

IXYS

IXYS Corporation

IXFH6N120P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH6N120P

PowerMOSFET

IXYS

IXYS Corporation

技術(shù)參數(shù)

  • Maximum On-Resistance @ 25 ℃ (Ohm)：

    2.75

  • Continuous Drain Current @ 25 ℃ (A)：

    6

  • Gate Charge (nC)：

    92

  • Thermal resistance [junction-case](K/W)：

    0.5

  • Configuration：

    Single

  • Package Type：

    TO-263

  • Power Dissipation (W)：

    250

  • Maximum Reverse Recovery (ns)：

    300

  • Sample Request：

    Yes

  • Check Stock：

    Yes

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IXYS/艾賽斯
23+
TO-263
65493
原裝正品 華強(qiáng)現(xiàn)貨
 詢價(jià)
IXYS
23+
TO-263-3
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
 詢價(jià)
IXYS
1809+
TO-263
326
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
IXYS
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
IXYS
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
IXYS/艾賽斯
23+
TO-263
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
IXYS
23+
TO2633 D2Pak (2 Leads + Tab) T
9000
原裝正品，支持實(shí)單
 詢價(jià)
IXYS
18+
TO-263
595
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
更多IXFA6N120P供應(yīng)商 更新時(shí)間2025-7-29 8:31:00

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