特性 Features

? Very low rDS(ON) 5mΩ (typical)

? Ultra low total gate charge 14nC (typical)

? SEE hardness (see SEE report for details)

? SEL/SEB LETTH (VDS = 100V, VGS = 0V):

86MeV?cm2/mg(Si)

? ISL70023SEH radiation accepting testing

? High dose rate (50-300rad(Si)/s): 100krad(Si)

? Low dose rate (0.01rad(Si)/s): 75krad(Si)

? ISL73023SEH radiation accepting testing

? Low dose rate (0.01rad(Si)/s): 75krad(Si)

? Ultra small hermetically sealed 4 Ld Surface Mount

Device (SMD) package

? Package area: 42mm2

? Full military-temperature range operation

? TA = -55°C to +125°C

? TJ = -55°C to +150°C

? Qualified to Renesas Rad Hard GaN FET

Screening and QCI Flow (R34TB0003EU)

? All screening and QCI is in accordance with

MIL-PRF-38535L Class-V