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IS43TR85120AL-125KBL集成電路(IC)的存儲(chǔ)器規(guī)格書(shū)PDF中文資料

廠(chǎng)商型號(hào) |
IS43TR85120AL-125KBL |
參數(shù)屬性 | IS43TR85120AL-125KBL 封裝/外殼為78-TFBGA;包裝為托盤(pán);類(lèi)別為集成電路(IC)的存儲(chǔ)器;產(chǎn)品描述:IC DRAM 4GBIT PARALLEL 78TWBGA |
功能描述 | 512Mx8, 256Mx16 4Gb DDR3 SDRAM |
封裝外殼 | 78-TFBGA |
文件大小 |
3.94166 Mbytes |
頁(yè)面數(shù)量 |
88 頁(yè) |
生產(chǎn)廠(chǎng)商 | ISSI |
中文名稱(chēng) | 矽成半導(dǎo)體 |
網(wǎng)址 | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-9-23 15:38:00 |
人工找貨 | IS43TR85120AL-125KBL價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
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IS43TR85120AL-125KBL規(guī)格書(shū)詳情
FEATURES
● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
● High speed data transfer rates with system frequency up to 1066 MHz
● 8 internal banks for concurrent operation
● 8n-Bit pre-fetch architecture
● Programmable CAS Latency
● Programmable Additive Latency: 0, CL-1,CL-2
● Programmable CAS WRITE latency (CWL) based on tCK
● Programmable Burst Length: 4 and 8
● Programmable Burst Sequence: Sequential or Interleave
● BL switch on the fly
● Auto Self Refresh(ASR)
● Self Refresh Temperature(SRT)
● Refresh Interval:
7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
● Partial Array Self Refresh
● Asynchronous RESET pin
● TDQS (Termination Data Strobe) supported (x8 only)
● OCD (Off-Chip Driver Impedance Adjustment)
● Dynamic ODT (On-Die Termination)
● Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
● Write Leveling
● Up to 200 MHz in DLL off mode
● Operating temperature:
Commercial (TC = 0°C to +95°C)
Industrial (TC = -40°C to +95°C)
Automotive, A1 (TC = -40°C to +95°C)
Automotive, A2 (TC = -40°C to +105°C)
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
IS43TR85120AL-125KBL
- 制造商:
ISSI, Integrated Silicon Solution Inc
- 類(lèi)別:
集成電路(IC) > 存儲(chǔ)器
- 包裝:
托盤(pán)
- 存儲(chǔ)器類(lèi)型:
易失
- 存儲(chǔ)器格式:
DRAM
- 技術(shù):
SDRAM - DDR3L
- 存儲(chǔ)容量:
4Gb(512M x 8)
- 存儲(chǔ)器接口:
并聯(lián)
- 寫(xiě)周期時(shí)間 - 字,頁(yè):
15ns
- 電壓 - 供電:
1.283V ~ 1.45V
- 工作溫度:
0°C ~ 95°C(TC)
- 安裝類(lèi)型:
表面貼裝型
- 封裝/外殼:
78-TFBGA
- 供應(yīng)商器件封裝:
78-TWBGA(9x10.5)
- 描述:
IC DRAM 4GBIT PARALLEL 78TWBGA
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ISSI |
原廠(chǎng)封裝 |
9800 |
原裝進(jìn)口公司現(xiàn)貨假一賠百 |
詢(xún)價(jià) | |||
ISSI |
1708+ |
? |
8450 |
只做原裝進(jìn)口,假一罰十 |
詢(xún)價(jià) | ||
ISSI Integrated Silicon Soluti |
23+ |
78TWBGA (9x10.5) |
9000 |
原裝正品,支持實(shí)單 |
詢(xún)價(jià) | ||
ISSI |
23+ |
BGA |
7000 |
詢(xún)價(jià) | |||
ISSI |
2022+ |
原廠(chǎng)原包裝 |
8600 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo) |
詢(xún)價(jià) | ||
ISSI, Integrated Silicon Solu |
23+ |
78-TWBGA9x10.5 |
7300 |
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢(xún)價(jià) | ||
ISSI |
24+ |
SMD |
15600 |
動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器4G |
詢(xún)價(jià) | ||
ISSI |
25+ |
FBGA-78 |
16000 |
原裝優(yōu)勢(shì)絕對(duì)有貨 |
詢(xún)價(jià) | ||
ISSI |
23+ |
BGA |
12800 |
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢(xún)價(jià) | ||
ISSI |
1433 |
BGA |
19 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢(xún)價(jià) |