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首頁>IS43DR16640B-25EBL>規(guī)格書詳情

IS43DR16640B-25EBL集成電路(IC)的存儲器規(guī)格書PDF中文資料

IS43DR16640B-25EBL
廠商型號

IS43DR16640B-25EBL

參數(shù)屬性

IS43DR16640B-25EBL 封裝/外殼為84-TFBGA;包裝為卷帶(TR);類別為集成電路(IC)的存儲器;產(chǎn)品描述:IC DRAM 1GBIT PARALLEL 84TWBGA

功能描述

1Gb (x8, x16) DDR2 SDRAM

封裝外殼

84-TFBGA

文件大小

548.81 Kbytes

頁面數(shù)量

28

生產(chǎn)廠商 Integrated Silicon Solution Inc
企業(yè)簡稱

ISSI北京矽成

中文名稱

北京矽成半導(dǎo)體有限公司官網(wǎng)

原廠標(biāo)識
ISSI
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2025-8-4 17:52:00

人工找貨

IS43DR16640B-25EBL價格和庫存,歡迎聯(lián)系客服免費人工找貨

IS43DR16640B-25EBL規(guī)格書詳情

FEATURES

? Clock frequency up to 400MHz

? 8 internal banks for concurrent operation

? 4‐bit prefetch architecture

? Programmable CAS Latency: 3, 4, 5, 6 and 7

? Programmable Additive Latency: 0, 1, 2, 3, 4, 5

and 6

? Write Latency = Read Latency‐1

? Programmable Burst Sequence: Sequential or

Interleave

? Programmable Burst Length: 4 and 8

? Automatic and Controlled Precharge Command

? Power Down Mode

? Auto Refresh and Self Refresh

? Refresh Interval: 7.8 ?s (8192 cycles/64 ms)

? ODT (On‐Die Termination)

? Weak Strength Data‐Output Driver Option

? Bidirectional differential Data Strobe (Singleended

data‐strobe is an optional feature)

? On‐Chip DLL aligns DQ and DQs transitions with

CK transitions

? DQS# can be disabled for single‐ended data

strobe

? Read Data Strobe supported (x8 only)

? Differential clock inputs CK and CK#

? VDD and VDDQ = 1.8V ± 0.1V

? PASR (Partial Array Self Refresh)

? SSTL_18 interface

? tRAS lockout supported

? Operating temperature:

Commercial (TA = 0°C to 70°C ; TC = 0°C to 85°C)

Industrial (TA = ‐40°C to 85°C; TC = ‐40°C to 95°C)

Automotive, A1 (TA = ‐40°C to 85°C; TC = ‐40°C to 95°C)

Automotive, A2 (TA = ‐40°C to 105°C; TC = ‐40°C to

105°C)

產(chǎn)品屬性

  • 產(chǎn)品編號:

    IS43DR16640B-25EBL

  • 制造商:

    ISSI, Integrated Silicon Solution Inc

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    卷帶(TR)

  • 存儲器類型:

    易失

  • 存儲器格式:

    DRAM

  • 技術(shù):

    SDRAM - DDR2

  • 存儲容量:

    1Gb(64M x 16)

  • 存儲器接口:

    并聯(lián)

  • 寫周期時間 - 字,頁:

    15ns

  • 電壓 - 供電:

    1.7V ~ 1.9V

  • 工作溫度:

    0°C ~ 70°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    84-TFBGA

  • 供應(yīng)商器件封裝:

    84-TWBGA(8x12.5)

  • 描述:

    IC DRAM 1GBIT PARALLEL 84TWBGA

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
ISSI
18+
BGA
10450
全新原裝現(xiàn)貨,可出樣品,可開增值稅發(fā)票
詢價
ISSI
2014
BGA
849
原裝現(xiàn)貨支持BOM配單服務(wù)
詢價
ISSI
24+
NA/
4099
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
詢價
ISSI Integrated Silicon Solut
25+
84-TFBGA
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
ISSI,
25+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
詢價
ISSI
2025+
BGA-84
32560
原裝優(yōu)勢絕對有貨
詢價
ISSI/芯成
24+
BGA
22055
鄭重承諾只做原裝進口現(xiàn)貨
詢價
ISSI, Integrated Silicon Solut
21+
BGA
5280
進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營
詢價
ISSI Integrated Silicon Soluti
23+/24+
84-TFBGA
8600
只供原裝進口公司現(xiàn)貨+可訂貨
詢價
ISSI Integrated Silicon Soluti
22+
84TWBGA (8x12.5)
9000
原廠渠道,現(xiàn)貨配單
詢價