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首頁>IS41C16100-60T>規(guī)格書詳情

IS41C16100-60T中文資料北京矽成數(shù)據(jù)手冊PDF規(guī)格書

IS41C16100-60T
廠商型號

IS41C16100-60T

功能描述

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件大小

123.63 Kbytes

頁面數(shù)量

20

生產(chǎn)廠商 Integrated Silicon Solution Inc
企業(yè)簡稱

ISSI北京矽成

中文名稱

北京矽成半導體有限公司官網(wǎng)

原廠標識
ISSI
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2025-8-4 15:46:00

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IS41C16100-60T規(guī)格書詳情

DESCRIPTION

The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.

The Byte Write control, of upper and lower byte, makes the IS41C16100 ideal for use in 16-bit and 32-bit wide data bus systems.

FEATURES

? TTL compatible inputs and outputs; tristate I/O

? Refresh Interval:

— Auto refresh Mode: 1,024 cycles /16 ms

— RAS-Only, CAS-before-RAS (CBR), and Hidden

— Self refresh Mode - 1,024 cycles / 128ms

? JEDEC standard pinout

? Single power supply:

— 5V ± 10 (IS41C16100)

— 3.3V ± 10 (IS41LV16100)

? Byte Write and Byte Read operation via two CAS

? Industrail Temperature Range -40oC to 85oC

? Lead-free available

產(chǎn)品屬性

  • 型號:

    IS41C16100-60T

  • 制造商:

    ISSI

  • 制造商全稱:

    Integrated Silicon Solution, Inc

  • 功能描述:

    1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

供應商 型號 品牌 批號 封裝 庫存 備注 價格
ISSI
20+
TSOP
2960
誠信交易大量庫存現(xiàn)貨
詢價
ISSI
2023+
SOJ24
6893
十五年行業(yè)誠信經(jīng)營,專注全新正品
詢價
ISSI
24+
TSOP-50
4650
詢價
ISSI
06+
原廠原裝
4266
只做全新原裝真實現(xiàn)貨供應
詢價
ISSI Integrated Silicon Soluti
22+
42SOJ
9000
原廠渠道,現(xiàn)貨配單
詢價
ISSI, Integrated Silicon Solut
24+
42-SOJ
56200
一級代理/放心采購
詢價
ISSI
23+
SOJ24
24981
原裝正品代理渠道價格優(yōu)勢
詢價
ISSI
23+
TSOP
24998
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
ISSI
22+
TSSOP
8000
原裝正品支持實單
詢價
ISSI
2023+
TSOP
50000
原裝現(xiàn)貨
詢價