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IRLR2908PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRLR2908PBF規(guī)格書詳情
描述 Description
Specifically designed for Automotive applications, this HEXFET ? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
特性 Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
產(chǎn)品屬性
- 型號：
IRLR2908PBF
- 功能描述：
MOSFET 80V 1 N-CH HEXFET PWR MOSFET 28mOhms
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
1700 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
INFINEO |
24+ |
TO-252 |
80000 |
只做自己庫存 全新原裝進口正品假一賠百 可開13%增 |
詢價 | ||
INFINEON/英飛凌 |
25+ |
TO-252 |
65248 |
百分百原裝現(xiàn)貨 實單必成 |
詢價 | ||
IR |
25+ |
TO-252 |
20300 |
IR原裝特價IRLR2908PBF即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
IR |
14+ |
D-pak |
600 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
INFINEON/英飛凌 |
21+ |
NA |
1820 |
只做原裝,一定有貨,不止網(wǎng)上數(shù)量,量多可訂貨! |
詢價 | ||
INFINEON/英飛凌 |
24+ |
NA |
675 |
原裝現(xiàn)貨,專業(yè)配單專家 |
詢價 | ||
IR |
2021+ |
TO-252 |
3500 |
十年專營原裝現(xiàn)貨,假一賠十 |
詢價 | ||
IR |
23+ |
D-pak |
30000 |
代理全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 | ||
IR |
22+ |
D-PAK |
8000 |
原裝正品支持實單 |
詢價 |
