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IRLR2705PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRLR2705PBF規(guī)格書詳情
描述 Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
? Logic-Level Gate Drive
? Ultra Low On-Resistance
? Surface Mount (IRLR2705)
? Straight Lead (IRLU2705)
? Advanced Process Technology
? Fast Switching
? Fully Avalanche Rated
? Lead-Free
產(chǎn)品屬性
- 型號：
IRLR2705PBF
- 功能描述：
MOSFET 55V 1 N-CH HEXFET 40mOhms 16.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
2100 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
20+ |
DPAK |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
IR |
25+ |
TO-252 |
4500 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價 | ||
IR |
21+ |
TO-252 |
30000 |
百域芯優(yōu)勢 實單必成 可開13點增值稅 |
詢價 | ||
IR |
22+ |
D-pak |
8000 |
原裝正品支持實單 |
詢價 | ||
IR |
24+ |
TO-252 |
2544 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
INFINEON/英飛凌 |
2407+ |
30098 |
全新原裝!倉庫現(xiàn)貨,大膽開價! |
詢價 | |||
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IR |
08+ |
D-pak |
20000 |
普通 |
詢價 | ||
IR |
24+ |
D-pak |
90000 |
一級代理商進口原裝現(xiàn)貨、價格合理 |
詢價 |
