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IRG4PC40KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRG4PC40KPBF

INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT

IRF

International Rectifier

IRG4PC40S

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)

StandardSpeedIGBT Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4PC40U

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)

Benefits ?Generation4IGBTsofferhighestefficiencyavailable ?IGBTsoptimizedforspecifiedapplicationconditions ?Designedtobeadrop-inreplacementforequivalent industry-standardGeneration3IRIGBTs Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHz

IRF

International Rectifier

IRG4PC40UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE( Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)

UltraFastCoPackIGBT Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ult

IRF

International Rectifier

IRG4PC40UD-EPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFRED?ultrafast,ultra-soft-recoveryanti-pa

IRF

International Rectifier

IRG4PC40UDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFRED?ultrafast,ultra-soft-recoveryanti-pa

IRF

International Rectifier

IRG4PC40UDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFRED?ultrafast,ultra-soft-recoveryanti-pa

IRF

International Rectifier

IRG4PC40UPBF

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

Benefits ?Generation4IGBTsofferhighestefficiencyavailable ?IGBTsoptimizedforspecifiedapplicationconditions ?Designedtobeadrop-inreplacementforequivalent industry-standardGeneration3IRIGBTs Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHz

IRF

International Rectifier

IRG4PC40W

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)

Benefits ?Lowerswitchinglossesallowmorecost-effective operationthanpowerMOSFETsupto150kHz (hardswitchedmode) ?Ofparticularbenefittosingle-endedconvertersand boostPFCtopologies150Wandhigher ?Lowconductionlossesandminimalminority-carrier recombinat

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IRG4PC40

  • 功能描述：

    IGBT FAST 600V 49A TO-247AC

  • RoHS：

    否

  • 類別：

    分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路

  • 系列：

    -

  • 標(biāo)準(zhǔn)包裝：

    30

  • 系列：

    GenX3™ IGBT

  • 類型：

    PT 電壓 -

  • 集電極發(fā)射極擊穿（最大）：

    1200V Vge,

  • Ic時的最大Vce（開）：

    3V @ 15V，100A 電流 -

  • 集電極(Ic)（最大）：

    200A 功率 -

  • 最大：

    830W

  • 輸入類型：

    標(biāo)準(zhǔn)

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-247-3

  • 供應(yīng)商設(shè)備封裝：

    PLUS247?-3

  • 包裝：

    管件

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
15+
TO-247
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
 詢價
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價
IR
22+
TO-247
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價
IR
23+
TO-247
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
TO-247
7000
詢價
IR
23+
TO-3P
5500
現(xiàn)貨,全新原裝
 詢價
IR
23+
1000
詢價
IR
16+
TO-3P
10000
全新原裝現(xiàn)貨
 詢價
IR
06+
原產(chǎn)原裝
1000
自己公司全新庫存絕對有貨
 詢價
IR
23+
TO-247
35890
詢價
更多IRG4PC40供應(yīng)商 更新時間2025-7-27 11:04:00

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