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IRG4PC40U

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)

Benefits ?Generation4IGBTsofferhighestefficiencyavailable ?IGBTsoptimizedforspecifiedapplicationconditions ?Designedtobeadrop-inreplacementforequivalent industry-standardGeneration3IRIGBTs Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHz

IRG4PC40U

Fit Rate / Equivalent Device Hours

IRG4PC40U

600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package;

IRG4PC40U

Package：TO-247-3；包裝：卷帶（TR） 類別：分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 40A 160W TO247AC

IRG4PC40UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE( Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)

UltraFastCoPackIGBT Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ult

IRG4PC40UD-EPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFRED?ultrafast,ultra-soft-recoveryanti-pa

IRG4PC40UDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFRED?ultrafast,ultra-soft-recoveryanti-pa

IRG4PC40UDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFRED?ultrafast,ultra-soft-recoveryanti-pa

IRG4PC40UPBF

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

Benefits ?Generation4IGBTsofferhighestefficiencyavailable ?IGBTsoptimizedforspecifiedapplicationconditions ?Designedtobeadrop-inreplacementforequivalent industry-standardGeneration3IRIGBTs Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHz

IRG4PC40UD

600V 超快 8-60 kHz Copack IGBT，采用 TO-247AC 封裝; ? UltraFast: Optimized for high operating frequencies 8-40kHz in hard switching, >200kHz in resonant mode\n? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3\n? IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery anti-parallel diodes for use in bridge configurations\n? Industry standard TO-247AC package\n? Lead-free\n\n優(yōu)勢:\n? Generation -4 IGBT's offer highest efficiencies available?\n? IGBT's optimized for specific application conditions\n? HEXFRED diodes optimized for performance with IGBT's. Minimized recovery characteristics require less/no snubbing\n? Designed to be a \"drop-in\" replacement for equivalent industry-standard Generation 3 IR IGBT's\n;