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IRG4PC30KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

ShortCircuitRatedUltraFastIGBT Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?Tighterparameterdistributionandhigherefficiencythanpreviousgen

IRG4PC30KD

600V UltraFast 8-25 kHz Copack IGBT in a TO-247AC package; ? 對電機控制的高短路額定值優(yōu)化，tsc =10μs, @360V VCE（啟動），TJ=125°C, VGE=15V\n? 低通態(tài)損耗與高開關(guān)速度相結(jié)合\n? 參數(shù)分布更緊湊，效率更高\n? 與 HEXFREDTM超快、超軟恢復(fù)反并聯(lián)二極管聯(lián)合封裝的 IGBT\n? 無鉛\n\n優(yōu)勢:\n? IGBT 提供可行的高功率密度電機控制\n? HEXFREDTM 二極管經(jīng)過與 IGBT 并用優(yōu)化，將噪聲、EMI 和開關(guān)損耗降低\n;

600V IGBT 與超快8-25 kHz 軟恢復(fù)二極管聯(lián)合封裝到 TO-247AC 封裝中。\n

IRG4PC30KD

Package：TO-247-3；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 28A 100W TO247AC

IRG4PC30KDPBF

INSULATED GATE BIPOALR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Tighterparameterdistributionandhigherefficiency thanpreviousgenerations ?IGBTco-packaged

IRG4PC30KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRG4PC30KDPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRG4PC30KDPBF

Package：TO-247-3；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 28A 100W TO247AC