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IRFR220TRR

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestr

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR220TRR

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR220TRRPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestr

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR220TRRPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR220TRRPBFA

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFRSLASHU220A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10A(Max.)@VDS=200V ■LowRDS(ON):0.626?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFRU220A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10A(Max.)@VDS=200V ■LowRDS(ON):0.626?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFU220

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestr

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU220

4.6A,200V,0.800Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

IRFU220

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFR220TRR

  • 功能描述：

    MOSFET N-Chan 200V 4.8 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
24+
原廠封裝
10862
原裝現(xiàn)貨假一罰十
 詢價(jià)
IR/VISH
24+
65230
詢價(jià)
IR
22+
n/a
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
2023+環(huán)?，F(xiàn)貨
TO-252
18000
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
 詢價(jià)
IR/VISH
23+
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
2023+
TO-252
50000
原裝現(xiàn)貨
 詢價(jià)
IR/VISH
23+
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
n/a
7000
詢價(jià)
VISHAY
23+
TO-252
30000
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢
 詢價(jià)
VISHAY(威世)
2447
TO-252-3
115000
3000個(gè)/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價(jià)
更多IRFR220TRR供應(yīng)商 更新時(shí)間2025-7-28 13:31:00

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