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IRFU220

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

IRFU220

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR220,SiHFR220) ?Straightlead(IRFU220,SiHFU220) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

IRFU220

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestr

IRFU220

4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

IRFU220

絲印：IPAK；Package：TO-251；iscN-Channel MOSFET Transistor

IRFU220

Power MOSFET; Dynamic dV/dt rating\nRepetitive avalanche rated\nSurface-mount (IRFR220, SiHFR220);

IRFU220A

Advanced Power MOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10A(Max.)@VDS=200V ■LowRDS(ON):0.626?(Typ.)

IRFU220B

200V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh

IRFU220B

200V N-Channel MOSFET

GeneralDescription TheseN-Channelenhancementmodepowerfieldeffect transistorsareproducedusingONSemiconductor’s proprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitching performance,andw

IRFU220B

功率 MOSFET，N 溝道，B-FET，200 V，4.6 A，0.9 ?，IPAK; ?4.6 A，200 V，RDS(on) = 800 mΩ，條件是 VGS = 10 V\n?低柵極電荷（典型值12 nC)\n?低 Crss（典型值10 pF)\n?快速開關(guān)\n?100% 經(jīng)過雪崩擊穿測試\n?提高了 dv/dt 性能\n;

這些N溝道增強(qiáng)型功率場效應(yīng)晶體管是采用飛兆專有的、平面條形DMOS技術(shù)生產(chǎn)的。這一先進(jìn)技術(shù)是專為最大限度地降低導(dǎo)通電阻，提供卓越的開關(guān)性能，以及在雪崩擊穿和換相情況下承受高能量脈沖而開發(fā)的。這些器件非常適合于高效率的開關(guān)DC/DC轉(zhuǎn)換器、開關(guān)電源、用于不間斷電源的DC-AC轉(zhuǎn)換器和電機(jī)控制。