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零件型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

IRFR120TRRPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR120TRRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR120Z

AUTOMOTIVEMOSFET

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch

IRF

International Rectifier

IRFR120Z

AUTOMOTIVEMOSFET

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR120Z

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤190m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR120Z

N-ChannelEnhancementModeMOSFET

Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infraredorwavesoldering techniques.Powerdissipationlevelsupto 1.5wattsarepossibleintypicalsurfacemo- untapplications. Features VDS(V)=100V ID=9.4A(VGS=10V) RDS(ON)=210mW(VGS=10V)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRFR120Z

AUTOMOTIVEMOSFET

Features ●AdvancedProcessTechnology ●UltraLowOn-Resistance ●175°COperatingTemperature ●FastSwitching ●RepetitiveAvalancheAlloweduptoTjmax

IRF

International Rectifier

IRFR120ZPBF

AUTOMOTIVEMOSFET

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch

IRF

International Rectifier

IRFR120ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFR120ZPBF

AUTOMOTIVEMOSFET

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFR120ATM

  • 功能描述：

    MOSFET 100V N-Channel A-FET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
FAIRCHILD
24+
TO-252
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
harris
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢渠道供應(yīng),歡迎來電咨詢
 詢價(jià)
FAI
23+
TO252
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
FAIRCHILD/仙童
10+
TO-252-2
5000
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
Fairchild(飛兆/仙童)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
 詢價(jià)
IR
23+
D-PAK/TO-252
3000
原裝正品假一罰百!可開增票!
 詢價(jià)
FAIRCHILD/仙童
23+
TO-252-2
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
VB
21+
D-PAK
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
Fairchild/ON
22+
TO2523 DPak (2 Leads + Tab) SC
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
Fairchild/ON
23+
TO2523 DPak (2 Leads + Tab) SC
9000
原裝正品，支持實(shí)單
 詢價(jià)
更多IRFR120ATM供應(yīng)商 更新時(shí)間2025-7-29 10:20:00

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