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IRFBE30L

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatasheetprovidesinformationaboutpartsthatare? R

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBE30L

HEXFET? Power MOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ODynamicdv/dtRating ORepetitiveAvalancheRated OFastSwitching OEaseofPa

IRF

International Rectifier

IRFBE30L

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofP

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBE30L

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBE30LPBF

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatasheetprovidesinformationaboutpartsthatare? R

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBE30LPBF

HEXFET Power MOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ODynamicdv/dtRating ORepetitiveAvalancheRated OFastSwitching OEaseofPa

IRF

International Rectifier

IRFBE30LPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofP

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBE30LPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRFBE30L

  • 功能描述：

    MOSFET N-Chan 800V 4.1 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
06+
原廠原裝
1001
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
IR
2015+
TO-262
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
 詢價
IR
24+
TO-262
8866
詢價
IR
23+
TO-262
7600
全新原裝現(xiàn)貨
 詢價
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
VISHAY
24+
SOT-262
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價
VISHAY/威世
23+
SOT-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VISHAY
1503+
TO-262
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
VISHAY/威世
23+
SOT-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VISHAY/威世
21+
SOT-262
10000
原裝現(xiàn)貨假一罰十
 詢價
更多IRFBE30L供應(yīng)商 更新時間2025-7-21 15:54:00

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