零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IRF9Z24L | Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A) Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | |
IRF9Z24L | Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
IRF9Z24L | Advanced Process Technology Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. ●AdvancedProcessTe | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
AdvancedProcessTechnology | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET(Vdss=-55V,Rds(on)=0.175ohm,Id=-12A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
-55VP-ChannelMOSFET Features VDS(V)=-55V ID=-12A(VGS=-10V) RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司 | UMW | ||
PowerMOSFET(Vdss=-55V,Rds(on)=0.175ohm,Id=-12A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
ADVANCEDPROCESSTECHNOLOGY | IRF International Rectifier | IRF |
詳細參數(shù)
- 型號:
IRF9Z24L
- 制造商:
IRF
- 制造商全稱:
International Rectifier
- 功能描述:
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
2015+ |
TO-262 |
12500 |
全新原裝,現(xiàn)貨庫存長期供應(yīng) |
詢價 | ||
IR |
23+ |
TO-262 |
35890 |
詢價 | |||
IR |
24+ |
TO-262 |
8866 |
詢價 | |||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
23+ |
TO-262 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
IR |
1822+ |
TO-262 |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
IR/VISHAY |
20+ |
TO262 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
IR |
22+ |
TO-262 |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
TO-262 |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
IR |
2025+ |
TO-252 |
4675 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價 |
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