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IRF9Z24LPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z24N

Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9Z24N

Marking：F9Z24N；Package：TO-220；-55V P-Channel MOSFET

Features VDS(V)=-55V ID=-12A(VGS=-10V) RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

IRF9Z24NL

Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9Z24NL

Advanced Process Technology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9Z24NLPBF

HEXFET Power MOSFET

IRF

International Rectifier

IRF9Z24NPBF

HEXFET Power MOSFET

IRF

International Rectifier

IRF9Z24NS

Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9Z24NS

Advanced Process Technology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF9Z24NSPBF

HEXFET Power MOSFET

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IRF9Z24

  • 功能描述：

    MOSFET P-Chan 60V 11 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
25+
TO-220
20300
IR原裝特價IRF9Z24即刻詢購立享優(yōu)惠#長期有貨
 詢價
IR
24+
TO 220
160872
明嘉萊只做原裝正品現(xiàn)貨
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
INTERNATIONA
05+
原廠原裝
4234
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價
IR
23+
TO-220
35890
詢價
IR
24+/25+
50
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
IR
24+
TO-220
3
詢價
IR
DIP
1200
正品原裝--自家現(xiàn)貨-實(shí)單可談
 詢價
IR
15+
TO-220
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
 詢價
ir
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
更多IRF9Z24供應(yīng)商 更新時間2025-7-27 14:14:00

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