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首頁 >IRF6N60FP>規(guī)格書列表

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MTM6N60

PowerFieldEffectTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTM6N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP6N60

N-ChannelMosfetTransistor

DESCRITION ?Designedforhighefficiencyswitchmodepowersupply. FEATURES ?DrainCurrent-ID=6A@TC=25°C ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max) ?AvalancheEnergySpecified ?FastSwitching ?SimpleDriveRequirement

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP6N60

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS)

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MTP6N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP6N60E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP6N60E

TMOSPOWERFET6.0AMPERES600VOLTSRDS(on)=1.2OHMS

TMOSE-FET? PowerFieldEffectTransistor N?ChannelEnhancement?ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstand

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP6N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTW6N60E

PowerFieldEffectTransistorN-ChannelEnhancement-ModeSiliconGate

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTW6N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    IRF6N60FP

  • 制造商：

    SUNTAC

  • 制造商全稱：

    SUNTAC

  • 功能描述：

    POWER MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
23+
DIP
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
DIP
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
22+
TO-220
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
TO-220
7000
詢價(jià)
TI/德州儀器
23+
TO
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
IOR
24+
SMD-8
50000
詢價(jià)
IR
24+
SOP-8
5825
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存!
 詢價(jià)
IOR
24+
SOP
3200
絕對原裝自家現(xiàn)貨!真實(shí)庫存!歡迎來電!
 詢價(jià)
IR
20+
Micro8
49000
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價(jià)
更多IRF6N60FP供應(yīng)商 更新時(shí)間2025-7-26 15:01:00

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