描述 Description

The IRF6612PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.

? RoHs Compliant

? Lead-Free (Qualified up to 260°C Reflow)

? Application Specific MOSFETs

? Ideal for CPU Core DC-DC Converters

? Low Conduction Losses

? High Cdv/dt Immunity

? Low Profile (<0.7mm)

? Dual Sided Cooling Compatible

? Compatible with existing Surface Mount Techniques