首頁>IRF6618TR1>規(guī)格書詳情
IRF6618TR1中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF6618TR1規(guī)格書詳情
描述 Description
The IRF6609 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
? Low Conduction Losses
? Low Switching Losses
? Ideal Synchronous Rectifier MOSFET
? Low Profile (<0.7 mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號：
IRF6618TR1
- 功能描述：
MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
4000 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
INFINEON/IR |
1907+ |
NA |
2000 |
20年老字號,原裝優(yōu)勢長期供貨 |
詢價 | ||
IR |
24+ |
PLL |
20000 |
全新原廠原裝，進口正品現(xiàn)貨，正規(guī)渠道可含稅??！ |
詢價 | ||
IR |
23+ |
PLL |
999999 |
原裝正品現(xiàn)貨量大可訂貨 |
詢價 | ||
IR |
1802+ |
SMD |
6528 |
只做原裝正品現(xiàn)貨,或訂貨假一賠十! |
詢價 | ||
IR |
22+ |
QFN |
8000 |
原裝正品支持實單 |
詢價 | ||
IOR |
25+ |
DIRECTFE |
4500 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價 | ||
IR |
24+ |
SMD |
4000 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
IR |
24+ |
5650SMD |
7200 |
新進庫存/原裝 |
詢價 | ||
IRF6618TR1 |
1000 |
1000 |
詢價 |
