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IRF640NL

AdvancedProcessTechnology

IRF

International Rectifier

IRF640NLPBF

HEXFET?PowerMOSFET

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF640NLPBF

AdvancedProcessTechnologyDynamicdv/dtRating175OperatingTemperature

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640NLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF640NLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF640NPBF

HEXFET?PowerMOSFET

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF640NPBF

AdvancedProcessTechnologyDynamicdv/dtRating175OperatingTemperature

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640NPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF640NPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF640NS

N-ChannelPowerMOSFETs200V,18A,0.15ohm

Features ?UltraLowOn-Resistance -rDS(ON)=0.102?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRateingCurve

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    IRF640B

  • 功能描述：

    MOSFET 200V Single

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
VISHAY/威世
25+
TO-220
45000
VISHAY/威世全新現(xiàn)貨IRF640B即刻詢購立享優(yōu)惠#長期有排單訂
 詢價(jià)
FAIRCHILD
25+23+
TO220
13397
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
FAIRCHILD/仙童
25+
TO 220
154786
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
FSC
25+
TO-220
6500
十七年專營原裝現(xiàn)貨一手貨源,樣品免費(fèi)送
 詢價(jià)
FAIRCHILD
24+
TO-220-3
8866
詢價(jià)
FSC
2015+
SOP/DIP
19889
一級代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
仙童
06+
TO-220
5000
原裝
 詢價(jià)
FAIRCHILD
23+
TO-220
9526
詢價(jià)
N/A
SOP
630
正品原裝--自家現(xiàn)貨-實(shí)單可談
 詢價(jià)
FSC
2016+
TO-220
3900
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
更多IRF640B供應(yīng)商 更新時(shí)間2025-7-27 10:12:00

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