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IRF640

200V N-Channel Power MOSFET;

MINOS

邁諾斯

MINOS

IRF640

SEMICONDUCTORS

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IRF640

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640A

Advanced Power MOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10A(Max.)@VDS=200V ■LowerRDS(ON):0.144?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF640A

isc N-Channel MOSFET Transistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?LowRDS(on)=0.144Ω(TYP) ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?RuggedGateOxideTechnology

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF640B

200V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF640B

200V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640FI

isc N-Channel MOSFET Transistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?LowRDS(on)=0.180Ω(?TYP) ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?RuggedGateOxideTechnology

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF640FP

N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusinghecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.150? ■EXTREMELYHIGHdV/dtCAPABILITY ■VERYLOW

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

IRF640FP

IRF640FP 18A 200V N CHANNEL POWER MOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ?SiliconGateforFastSwitchingSpeeds ?LowRDS(on)toMinimizeOn-Losses.SpecifiedatElevatedTemperat

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

技術(shù)參數(shù)

  • Package：

    TO-220AB

  • Ch：

    N

  • VDS (V)：

    200

  • VGS (V)：

    20

  • RDS(on)@10V (?)：

    0.18

  • Qg @10V (nC)：

    70

  • Qgs (nC)：

    13

  • Qgd (nC)：

    39

  • ID Max. (A)：

    18

  • PD Max. (W)：

    125

  • VGS(th) Min. (V)：

    2

供應(yīng)商型號品牌批號封裝庫存備注價格
2015+
200
公司現(xiàn)貨庫存
 詢價
FAIRCHILD
TO-262
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價
IR
24+
3600
TO-220
 詢價
IR
24+
TO-220
2000
全新原裝深圳倉庫現(xiàn)貨有單必成
 詢價
IR
23+
TO-220
32078
10年以上分銷商,原裝進口件,服務(wù)型企業(yè)
 詢價
IOR
24+
TO-220
4000
原裝原廠代理 可免費送樣品
 詢價
IR(國際整流器)
2023+
N/A
4550
全新原裝正品
 詢價
IR
24+
PTO-220
66800
原廠授權(quán)一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力！
 詢價
IR
24+
TO 220
160871
明嘉萊只做原裝正品現(xiàn)貨
 詢價
VISH
2405+
TO-220
4475
只做原裝正品渠道訂貨
 詢價
更多IRF640供應(yīng)商 更新時間2025-7-28 17:00:00

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