IRF630S中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
IRF630S規(guī)格書詳情
DESCRIPTION
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.
■ TYPICAL RDS(on) = 0.35 ?
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100 AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
■ FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
APPLICATIONS
■ HIGH CURRENT SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
產(chǎn)品屬性
- 型號:
IRF630S
- 功能描述:
MOSFET N-Chan 200V 9.0 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
06+ |
TO-263 |
20000 |
自己公司全新庫存絕對有貨 |
詢價 | ||
IR |
2023+ |
D2-PAK |
50000 |
原裝現(xiàn)貨 |
詢價 | ||
ST |
24+ |
SMD-220 |
3200 |
絕對原裝自家現(xiàn)貨!真實庫存!歡迎來電! |
詢價 | ||
IR |
23+ |
TO-263 |
7000 |
詢價 | |||
IR |
2022+ |
D2-PAK |
48000 |
只做原裝,原裝,假一罰十 |
詢價 | ||
Vishay Siliconix |
2022+ |
TO-263-3,D2Pak(2 引線 + 接片 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
VBsemi(臺灣微碧) |
2447 |
TO263 |
105000 |
50個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期 |
詢價 | ||
FSC |
25+23+ |
TO-263 |
16529 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-263 |
35890 |
詢價 | |||
IR |
2025+ |
TO-263-2 |
5425 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價 |