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IRF630PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導體

IRF630PBF

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

KERSEMI

Kersemi Electronic Co., Ltd.

IRF630PBF

9A,200VHeatsinkN-ChannelTypePowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導體思祁半導體有限公司

IRF630PBF

N-Channel200V(D-S)MOSFET

FEATURES ?175°CJunctionTemperature ?PWMOptimized ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch ?DT-TrenchPowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

IRF630S

N-CHANNEL200V-0.35ohm-9A-D2PAKMESHOVERLAY]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.35? ■EXTREMELYHIGHdv/dtCAPABILITY ■100A

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

IRF630S

PowerMOSFET

PowerMOSFET VDSS=200V,RDS(on)=0.40ohm,ID=9.0A

TELTokyo Electron Ltd.

東電電子東京電子有限公司

IRF630S

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

IRF630S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導體

IRF630S

N-ChannelMOSFET

■Features ●VDS(V)=200V ●ID=9A(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

IRF630S

N-channelTrenchMOStransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

詳細參數(shù)

  • 型號：

    IRF630NLPBF

  • 功能描述：

    MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
24+
TO-262
100
只做原廠渠道 可追溯貨源
 詢價
IR
24+
TO-262-3
1944
詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
23+
TO-262-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
International Rectifier
2022+
1
全新原裝 貨期兩周
 詢價
IR
11+PBF
TO-262
500
現(xiàn)貨
 詢價
INFINEON
1503+
TO-262
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
Infineon
22+
NA
2118
加我QQ或微信咨詢更多詳細信息,
 詢價
IR
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
21+
TO-262
10000
原裝現(xiàn)貨假一罰十
 詢價
更多IRF630NLPBF供應商 更新時間2025-7-29 16:36:00

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