最新无码a∨在线观看,一本av高清一区二区三区,亚洲熟妇色l20p,宅男噜噜69av,中出あ人妻熟女中文字幕

首頁(yè) >IRF630F>規(guī)格書(shū)列表

零件編號(hào)下載 訂購(gòu)功能描述/絲印制造商 上傳企業(yè)LOGO

IRF630NSTRLPBF

AdvancedProcessTechnology

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF630PBF

HEXFETPowerMOSFET(VDSS=200V,RDS(on)=0.40廓,ID=9.0A)

IRF

International Rectifier

IRF630PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF630PBF

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

KERSEMI

Kersemi Electronic Co., Ltd.

IRF630PBF

9A,200VHeatsinkN-ChannelTypePowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

IRF630PBF

N-Channel200V(D-S)MOSFET

FEATURES ?175°CJunctionTemperature ?PWMOptimized ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch ?DT-TrenchPowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

IRF630S

N-CHANNEL200V-0.35ohm-9A-D2PAKMESHOVERLAY]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.35? ■EXTREMELYHIGHdv/dtCAPABILITY ■100A

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630S

PowerMOSFET

PowerMOSFET VDSS=200V,RDS(on)=0.40ohm,ID=9.0A

TELTokyo Electron Ltd.

東電電子東京電子有限公司

IRF630S

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

IRF630S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF630F

  • 制造商：

    ISC

  • 制造商全稱：

    Inchange Semiconductor Company Limited

  • 功能描述：

    N-channel mosfet transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ISC
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
ST/意法半導(dǎo)體
21+
TO-220F
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
HSMC
2022+
TO-220
12888
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
HSMC
22+
TO-220
100000
代理渠道/只做原裝/可含稅
 詢價(jià)
HSMC
23+
TO-220
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價(jià)
HSMC
23+
TO-220
5000
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
HSMC
23+
TO-220
5000
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
HSMC
24+
TO-220
89000
特價(jià)特價(jià)100原裝長(zhǎng)期供貨.
 詢價(jià)
ST品牌
2016+
TO-220F
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價(jià)
ST
05+
原廠原裝
8051
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
更多IRF630F供應(yīng)商 更新時(shí)間2025-7-26 9:03:00

相關(guān)規(guī)格書(shū)

更多

相關(guān)庫(kù)存

更多