IRF513中文資料HARRIS數(shù)據(jù)手冊PDF規(guī)格書
IRF513規(guī)格書詳情
描述 Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
特性 Features
? 4.9A, and 5.6A, 80V and 100V
? rDS(ON) = 0.54? and 0.74?
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
產(chǎn)品屬性
- 型號:
IRF513
- 制造商:
Distributed By MCM
- 功能描述:
SUB ONLY MOSFET TO-220AB N-CH80V 4.9A 43W GDS *SS
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
VBsemi |
23+ |
TO220 |
10065 |
原裝正品,有掛有貨,假一賠十 |
詢價 | ||
FAIRCHILD |
24+ |
TO-220AB-3 |
8866 |
詢價 | |||
原裝正品 |
23+ |
TO-220 |
54975 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價 | ||
VBsemi |
21+ |
TO220 |
10026 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IOR |
1999 |
TO220 |
200 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價 | ||
IR |
22+ |
TO-220 |
6000 |
十年配單,只做原裝 |
詢價 | ||
IR |
23+ |
TO-220 |
19526 |
詢價 | |||
mot |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
VBsemi |
23+ |
TO220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
N/A |
主營模塊 |
190 |
原裝正品,現(xiàn)貨供應(yīng) |
詢價 |