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IRF3205PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF3205PBF規(guī)格書詳情
描述 Description
Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號：
IRF3205PBF
- 功能描述：
MOSFET MOSFT 55V 98A 8mOhm 97.3nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | |||
Infineon(英飛凌) |
24+ |
TO-220 |
22941 |
原廠可訂貨,技術(shù)支持,直接渠道。可簽保供合同 |
詢價 | ||
INFINEON |
23+ |
K-B |
118040 |
只有原裝,請來電咨詢 |
詢價 | ||
IR |
21+ |
TO-220 |
6880 |
只做原裝,質(zhì)量保證 |
詢價 | ||
INFINEON/英飛凌 |
22+ |
TO-220 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
INFINEON/英飛凌 |
25+ |
TO-220 |
54648 |
百分百原裝現(xiàn)貨 實單必成 歡迎詢價 |
詢價 | ||
INFINEON/IR |
1907+ |
NA |
4050 |
20年老字號,原裝優(yōu)勢長期供貨 |
詢價 | ||
IR |
24+ |
TO-220 |
20000 |
全新原廠原裝，進口正品現(xiàn)貨，正規(guī)渠道可含稅?。?/div> |
詢價 | ||
IR |
2023+ |
TO-220 |
50000 |
原裝現(xiàn)貨 |
詢價 | ||
INFINEON |
25+ |
TO-220 |
918000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 |
