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IRF231中文資料INTERSIL數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRF231
廠商型號(hào)

IRF231

功能描述

8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs

文件大小

69.65 Kbytes

頁面數(shù)量

7

生產(chǎn)廠商

INTERSIL

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-8-8 19:50:00

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IRF231規(guī)格書詳情

描述 Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

特性 Features

? 8.0A and 9.0A, 150V and 200V

? rDS(ON) = 0.4? and 0.6?

? Single Pulse Avalanche Energy Rated

? SOA is Power Dissipation Limited

? Nanosecond Switching Speeds

? Linear Transfer Characteristics

? High Input Impedance

? Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

產(chǎn)品屬性

  • 型號(hào):

    IRF231

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

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